Multi-level inverter by GaN HEMT on semi-insulating substrate

Publication Information

Title

Japanese:
English:	Multi-level inverter by GaN HEMT on semi-insulating substrate

Author

Japanese:	仲順大吾, R. F. T. Fathulah, H. Fujita, E. Yagyu, 宮本恭幸.
English:	D. Nakajun, R. F. T. Fathulah, H. Fujita, E. Yagyu, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

4-4

Published date

Aug. 29, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)

Conference site

Japanese:
English:	Kirishima, Kagoshima