GaN HEMT Device Technology for W-band Power Amplifiers (Invited)

Publication Information

Title

Japanese:
English:	GaN HEMT Device Technology for W-band Power Amplifiers (Invited)

Author

Japanese:	牧山剛三, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, 宮本恭幸.
English:	K. Makiyama, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

A6-1

Published date

May 17, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Compound Semiconductor Week 2017

Conference site

Japanese:
English:	Berlin