Home >

news Help

Publication Information


Title
Japanese: 
English:Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs 
Author
Japanese: 高村 陽太, 周藤 悠介, 山本 修一郎, 舟窪 浩, 黒澤 実, 中川 茂樹, 菅原 聡.  
English: Y. Takamura, Y. Shuto, S. Yamamoto, H. Funakubo, M.K. Kurosawa, S. Nakagawa, S. Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 
Volume, Number, Page         pp. 72-75
Published date Jan. 2016 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 
Conference site
Japanese:ウィーン 
English:Vienna 
Official URL http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7440055&isnumber=7440031
 
DOI https://doi.org/10.1109/ULIS.2016.7440055
Abstract new spin-transfer torque (STT) magnetic tunnel junction (MTJ) using an inverse magnetostriction (IMS) material for the free layer is proposed for low-voltage MRAMs. The MTJ is surrounded by a piezoelectric gate structure so that a pressure for introducing the IMS effect can efficiently be applied to the free layer without any high-yield-strength support structure. During STT-induced magnetization switching, the energy barrier height for the switching can be lowered by the IMS effect, and thus a critical current density (JC) for the magnetization switching can dramatically be reduced. Energy performance of a low-voltage MRAM cell using the proposed MTJ and a FinFET is also demonstrated.

©2007 Tokyo Institute of Technology All rights reserved.