Heavily-doped SOI with SAM-Based Gate Dielectrics in Application to TMDC FET | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Heavily-doped SOI with SAM-Based Gate Dielectrics in Application to TMDC FET

Author

Japanese:	居駒遼, 川那子高暢, 河野行雄.
English:	Ryo Ikoma, Takamasa Kawanago, Yukio Kawano.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 3, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	232nd ECS Meeting

Conference site

Japanese:	ワシントン
English:

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