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Title
Japanese: 
English:Room temperature synthesis of GaN driven by kinetic energy beyond the limit of thermodynamics 
Author
Japanese: 今岡 享稔, Takeru Okada, Seiji Samukawa, 山元 公寿.  
English: Takane Imaoka, Takeru Okada, Seiji Samukawa, Kimihisa Yamamoto.  
Language English 
Journal/Book name
Japanese: 
English:ACS Appl. Mater. Interfaces 
Volume, Number, Page in press       
Published date Nov. 17, 2017 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1021/acsami.7b13694
Abstract The nitridation reaction is significantly important to utilize the unique properties of nitrides and nitrogen-doped materials. However, nitridation generally requires a high temperature or highly reactive reagents (often explosive) because the energies of N-N bond cleavage and nitrogen anion formation (N3-) are very high. We demonstrate the first room-temperature synthesis of GaN directly from GaCl3 by nanoscale atom exchange reaction. Nonequilibrium nitrogen molecules with very high translational energy were used as a chemically stable and safe nitrogen source. The irradiation of molecular nitrogen to the desired reaction area successfully provided a gallium nitride (GaN) nanosheet that exhibited a typical photoluminescence spectrum. Because this process retains the target substrate room temperature and does not involve any photon nor charged ion, it allows damage-less synthesis of the semiconducting metal nitrides, even directly on plastic substrates such as polyethylene terephthalate (PET).

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