Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide

Author

Japanese:	金澤徹, 宮本恭幸.
English:	Toru Kanazawa, Yasuyuki Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

2D06

Published date

Dec. 13, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	IWPSD 2017

Conference site

Japanese:
English:	Delhi

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