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Publication Information
Title
Japanese:
English:
Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate
Author
Japanese:
吉冨 翔一
,
只野 翔太郎
,
山中 健太郎
,
西山 伸彦
,
荒井 滋久
.
English:
Shoichi Yoshitomi
,
Shotaro Tadano
,
Kentaro Yamanaka
,
Nobuhiko Nishiyama
,
Shigehisa Arai
.
Language
English
Journal/Book name
Japanese:
English:
Japanese Journal of Applied Physics
Volume, Number, Page
Volume 57 Number 1 p. 012102
Published date
Dec. 2017
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.7567/JJAP.57.012102
©2007
Institute of Science Tokyo All rights reserved.