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Title
Japanese: 
English:System fault test of SiC device applied 6.6kV transformerless D-STATCOM 
Author
Japanese: Yushi Koyama, Yosuke Nakazawa, Hiroshi Mochikawa, Atsuhiko Kuzumaki, Naotaka Okada, 佐野 憲一朗.  
English: Yushi Koyama, Yosuke Nakazawa, Hiroshi Mochikawa, Atsuhiko Kuzumaki, Naotaka Okada, Kenichiro Sano.  
Language English 
Journal/Book name
Japanese: 
English:17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) 
Volume, Number, Page        
Published date Sept. 2015 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) 
Conference site
Japanese: 
English: 
Official URL https://ieeexplore.ieee.org/document/7309063/
 
DOI https://doi.org/10.1109/EPE.2015.7309063
Abstract This paper reports the investigation results for transformerless Distribution-Static Synchronous Compensator (D-STATCOM) with Modular Multilevel Converter (MMC) topology. The D-STATCOM has cascaded Silicon-Insulated Gate Bipolar Transistor (Si-IGBT) inverter cells and Silicon Carbide-Junction Field Effect Transistor (SiC-JFET) inverter cells. SiC-JFET inverter cells are operated with Pulse Width Modulation (PWM) since the low switching losses. The Si-IGBT inverter cells have higher DC voltage than the SiC-JFET inverter cells, and they are operated with one-pulse operation that output one positive and one negative pulses during a cycle. MMC topology and high voltage Si-IGBT inverter cells realized connecting the D-STATCOM to 6.6 kV distribution system without transformer. A prototype model of the D-STATCOM rated at 6.6 kV, 100 kVA was built and its field test was executed. The experimental results prove the stable rated operation and Fault-Ride-Through performance.

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