Japanese
Home
Search
Horizontal Search
Publication Search
( Advanced Search )
Patent Search
( Advanced Search )
Research Highlight Search
( Advanced Search )
Researcher Search
Search by Organization
Support
FAQ
T2R2 User Registration
Doctoral thesis registration
Support/Contact
About T2R2
What's T2R2?
Operation Guidance
Leaflets
About file disclosure
Related Links
Tokyo Tech
STAR Search
NII IR Program
Home
>
Help
Publication Information
Title
Japanese:
English:
Preferentially-aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on si substrates via 3C-SiC intermediate layers
Author
Japanese:
矢板 潤也
,
辻 赳行
,
波多野 睦子
,
岩崎 孝之
.
English:
J. Yaita
,
T. Tsuji
,
M. Hatano
,
T. Iwasaki
.
Language
Others
Journal/Book name
Japanese:
English:
Appl. Phys. Express
Volume, Number, Page
Vol. 11 pp. 045501.1〜4
Published date
Mar. 8, 2018
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.7567/APEX.11.045501
©2007
Tokyo Institute of Technology All rights reserved.