Fabrication of InGaAs Nanosheet Transistors with Regrown Source

Publication Information

Title

Japanese:
English:	Fabrication of InGaAs Nanosheet Transistors with Regrown Source

Author

Japanese:	金澤徹, 大澤一斗, 雨宮智宏, 木瀬信和, 青沼遼介, 宮本恭幸.
English:	Toru Kanazawa, Kazuto Ohsawa, Tomohiro Amemiya, Nobukazu Kise, Ryosuke Aonuma, Yasuyuki Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

We3C3.2

Published date

May 30, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Compound Semiconductor Week (CSW2018)

Conference site

Japanese:
English:	Boston