ECR-MBE法で作製したSi基板上GaN薄膜(t&lt;200nm)の高品質化への試み ―作製プロセスの見直しとその検討―

Publication Information

Title

Japanese:	ECR-MBE法で作製したSi基板上GaN薄膜(t<200nm)の高品質化への試み ―作製プロセスの見直しとその検討―
English:	Technical trial into higher crystalline quality of GaN films grown on Si substrates by ECR-MBE under reduced plasma damage -reconsideration of growth process and examination-

Author

Japanese:	淀徳男, 井上直哉, 塩尻大士, 譚ゴオン, 熊谷典子, 松田晃史, 吉本護.
English:	Tokuo Yodo, Naoya Inoue, daishi shiojiri, Geng Tan, Noriko Kumagai, Akifumi Matsuda, MAMORU YOSHIMOTO.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 27, 2013

Publisher

Japanese:
English:

Conference name

Japanese:	2013年第60回応用物理学会春季学術講演会
English:	The 60th JSAP Spring Meeting, 2013

Conference site

Japanese:	厚木
English:	Atsugi

Official URL