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Title
Japanese: 
English:Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si 
Author
Japanese: 利根川啓希, 熊谷佳郎, 福山聡史, 廣瀬皓大, 渡辺正裕.  
English: Hiroki Tonegawa, Yoshiro Kumagai, Satoshi Fukuyama, Koudai Hirose, MASAHIRO WATANABE.  
Language English 
Journal/Book name
Japanese: 
English: 
Volume, Number, Page        
Published date Sept. 9, 2018 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:The 2018 International Conference on Solid State Devices and Materials 
Conference site
Japanese:東京 
English:Tokyo 
Abstract Room temperature Negative Differential Resistance (NDR) with peak-to-valley current ratio (PVCR) as high as 105 and with peak current density (Jpeak) larger than 100 kA/cm2 has been demonstrated using atomically-thin-CaF2 energy barrier layers and Si quantum-wells triple-barrier resonant tunneling diode (RTD) structures. NDR characteristics were reasonably explained using theoretical analysis using simple model based on Esaki-Tsu formula and transfer matrix method.

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