Study on defects in amorphous oxide semiconductor, a-In-Ga-Zn-O | Science Tokyo Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Study on defects in amorphous oxide semiconductor, a-In-Ga-Zn-O

Author

Japanese:	井手啓介.
English:	Keisuke Ide.

Type

Type:	Thesis (Ph.D.) Outline
Country:	Japan

Language

English

Organization name

Tokyo Institute of Technology

Report number

乙第4146号

Conferred date

2017/09/30

Judge

File

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