Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping

Publication Information

Title

Japanese:	Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping
English:	Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping

Author

Japanese:	Hirahara, T, Komorida, T, Gu, Y, Nakamura, F, Idzuchi, H, Morikawa, H, Hasegawa, S, 平原徹.
English:	Hirahara, T, Komorida, T, Gu, Y, Nakamura, F, Idzuchi, H, Morikawa, H, Hasegawa, S, Toru Hirahara.

Language

English

Journal/Book name

Japanese:	Physical Review B
English:	Physical Review B

Volume, Number, Page

Vol. 80 No. 23

Published date

2009

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI