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Publication Information
Title
Japanese:
ゲート付き4 端子法によるMoS2 FET の電気特性評価
English:
Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors
Author
Japanese:
大場智昭
,
川那子高暢
,
小田俊理
.
English:
T. Oba
,
T. Kawanago
,
S. Oda
.
Language
Japanese
Journal/Book name
Japanese:
第79回応用物理学会秋季学術講演会 講演予稿集
English:
Extended abstracts of the 79th JSAP autumn meeting
Volume, Number, Page
Published date
Sept. 18, 2018
Publisher
Japanese:
公益社団法人 応用物理学会
English:
The Japan Society of Applied Physics
Conference name
Japanese:
2018年 第79回 応用物理学会秋季学術講演会
English:
The 79th JSAP Autumn Meeting,2018
Conference site
Japanese:
愛知県名古屋市
English:
Nagoya
File
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Institute of Science Tokyo All rights reserved.