Epitaxial lateral overgrowth of InGaAs on SiO 2 from (111) Si micro channel areas

Publication Information

Title

Japanese:	Epitaxial lateral overgrowth of InGaAs on SiO 2 from (111) Si micro channel areas
English:	Epitaxial lateral overgrowth of InGaAs on SiO 2 from (111) Si micro channel areas

Author

Japanese:	Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi.
English:	Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi.

Language

English

Journal/Book name

Japanese:	physica status solidi (c)
English:	physica status solidi (c)

Volume, Number, Page

Vol. 5 No. 9 pp. 2733-2735

Published date

July 2008

Publisher

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English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI