Formation of Mo&lt;inf&gt;2&lt;/inf&gt;C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes

Publication Information

Title

Japanese:	Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes
English:	Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes

Author

Japanese:	Kakushima, K., Suzuki, T., Hoshii, T., 宗田伊理也, Wakabayashi, H., Tsutsui, K., Iwai, H., Nohira, H., 星井拓也.
English:	Kakushima, K., Suzuki, T., Hoshii, T., Iriya Muneta, Wakabayashi, H., Tsutsui, K., Iwai, H., Nohira, H., Takuya Hoshii.

Language

English

Journal/Book name

Japanese:	17th International Workshop on Junction Technology, IWJT 2017
English:	17th International Workshop on Junction Technology, IWJT 2017

Volume, Number, Page

pp. 81-82

Published date

2017

Publisher

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Conference name

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Conference site

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Official URL

DOI