Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs

Publication Information

Title

Japanese:	Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs
English:	Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs

Author

Japanese:	Yamashita, D., Watanabe, K., Fujino, M., Hoshii, T., Okada, Y., Nakano, Y., Suga, T., Sugiyama, M., 星井拓也.
English:	Yamashita, D., Watanabe, K., Fujino, M., Hoshii, T., Okada, Y., Nakano, Y., Suga, T., Sugiyama, M., Takuya Hoshii.

Language

English

Journal/Book name

Japanese:	Conference Record of the IEEE Photovoltaic Specialists Conference
English:	Conference Record of the IEEE Photovoltaic Specialists Conference

Volume, Number, Page

Vol. 2016-November pp. 2317-2319

Published date

2016

Publisher

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English:

Conference name

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Conference site

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Official URL

DOI