An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Publication Information

Title

Japanese:
English:	An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Author

Japanese:	椋木康滋, 昆野賢太郎, 堀口剛司, A. Nishizawa, 葛本昌樹, 萩原誠, 赤木泰文.
English:	Y. Mukunoki, K. Konno, T. Horiguchi, A. Nishizawa, M. Kuzumoto, M. Hagiwara, H. Akagi.

Language

English

Journal/Book name

Japanese:
English:	IEEE Transactions on Power Electronics

Volume, Number, Page

Vol. 33 No. 11 pp. 9834-9842

Published date

Nov. 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI