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Publication Information
Title
Japanese:
English:
An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation
Author
Japanese:
椋木 康滋
,
昆野 賢太郎
,
堀口 剛司
, A. Nishizawa,
葛本 昌樹
,
萩原 誠
,
赤木 泰文
.
English:
Y. Mukunoki
,
K. Konno
,
T. Horiguchi
, A. Nishizawa,
M. Kuzumoto
,
M. Hagiwara
,
H. Akagi
.
Language
English
Journal/Book name
Japanese:
English:
IEEE Transactions on Power Electronics
Volume, Number, Page
Vol. 33 No. 11 pp. 9834-9842
Published date
Nov. 2018
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.1109/TPEL.2018.2796583
©2007
Tokyo Institute of Technology All rights reserved.