Japanese
Home
Search
Horizontal Search
Publication Search
( Advanced Search )
Patent Search
( Advanced Search )
Research Highlight Search
( Advanced Search )
Researcher Search
Search by Organization
Support
FAQ
T2R2 User Registration
Doctoral thesis registration
Support/Contact
About T2R2
What's T2R2?
Operation Guidance
Leaflets
About file disclosure
Related Links
Tokyo Tech
STAR Search
NII IR Program
Home
>
Help
Publication Information
Title
Japanese:
Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善
English:
Author
Japanese:
青沼 遼介
,
木瀬 信和
,
宮本 恭幸
.
English:
Ryousuke Aonuma
,
Nobukazu Kise
,
YASUYUKI MIYAMOTO
.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
21p-331-7
Published date
Sept. 21, 2018
Publisher
Japanese:
English:
Conference name
Japanese:
第79回応用物理学会秋季学術講演会
English:
Conference site
Japanese:
名古屋
English:
©2007
Tokyo Institute of Technology All rights reserved.