p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric

Publication Information

Title

Japanese:
English:	p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric

Author

Japanese:	張文倫, 祢津誠晃, 金澤徹, 雨宮智宏, 宮本恭幸.
English:	W. Zhang, S. Netsu, T.Kanazawa, T. Amemiya, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

M-7-03

Published date

Sept. 13, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2018 International Conference on Solid State Devices and Materials (SSDM 2018)

Conference site

Japanese:
English:	Tokyo