Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure

Publication Information

Title

Japanese:
English:	Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure

Author

Japanese:	堀田航史, 富塚ゆみ子, 板垣光祐, I. Makabe, S. Yoshida, 宮本恭幸.
English:	K. Hotta, Y. Tomizuka, K. Itagaki, I. Makabe, S. Yoshida, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Nov. 15, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	International Workshop on Nitride Semiconductors (IWN 2018)

Conference site

Japanese:
English:	Kanazawa