Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits

Author

Japanese:	宮本恭幸.
English:	Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

ED-III-1

Published date

Nov. 20, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)

Conference site

Japanese:
English:	Sendai

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