Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer

Publication Information

Title

Japanese:
English:	Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer

Author

Japanese:	宮本恭幸.
English:	Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

B7-4

Published date

July 3, 2019

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019)

Conference site

Japanese:
English:	Busa