Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Publication Information

Title

Japanese:	Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates
English:	Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Author

Japanese:	星井拓也, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, 角嶋邦之, 若林整, 筒井一生.
English:	Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI.

Language

English

Journal/Book name

Japanese:	Japanese Journal of Applied Physics
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 58 No. 6 pp. 061006

Published date

June 1, 2019

Publisher

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English:

Conference name

Japanese:
English:

Conference site

Japanese:
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Official URL

DOI