Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Publication Information

Title

Japanese:
English:	Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)

Author

Japanese:	星井拓也, 菅原聡, Takagi Shin-ichi.
English:	Hoshii Takuya, SATOSHI SUGAHARA, Takagi Shin-ichi.

Language

English

Journal/Book name

Japanese:
English:	Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers

Volume, Number, Page

Vol. 46 No. 4 pp. 2122-2126

Published date

Apr. 2007

Publisher

Japanese:
English:	Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Conference name

Japanese:
English:

Conference site

Japanese:
English: