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Publication Information
Title
Japanese:
English:
Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout
Author
Japanese:
安重 英祐
,
宗田 伊理也
,
角嶋 邦之
,
筒井 一生
,
若林 整
.
English:
Eisuke Anju
,
Iriya Muneta
,
Kuniyuki Kakushima
,
Kazuo Tsutsui
,
Hitoshi Wakabayashi
.
Language
English
Journal/Book name
Japanese:
English:
Journal of the Electron Devices Society (J-EDS)
Volume, Number, Page
vol. 8 pp. 1244-1250
Published date
Nov. 2018
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.1109/JEDS.2018.2882406
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Tokyo Institute of Technology All rights reserved.