The Potential of GaN HEMT on GaN Substrate | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	The Potential of GaN HEMT on GaN Substrate

Author

Japanese:	宮本恭幸.
English:	YASUYUKI MIYAMOTO.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

May 8, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Nanotech Malaysia

Conference site

Japanese:	クアラルンプール
English:	Kuala Lumpur

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