AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響

Publication Information

Title

Japanese:	AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響
English:

Author

Japanese:	鶴田脩真, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生.
English:	Shuma Tsuruta, Takuya Hoshii, 中島昭, 西澤伸一, Hiromichi Ohashi, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi, KAZUO TSUTSUI.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 18, 2018

Publisher

Japanese:
English:

Conference name

Japanese:	第79回応用物理学会秋季学術講演会
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Conference site

Japanese:	名古屋
English: