Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors

Publication Information

Title

Japanese:
English:	Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors

Author

Japanese:	Huynh Thi Cam Tu, Satoshi Inoue, TRONG TUE PHAN, 宮迫毅明, 下田達也.
English:	Huynh Thi Cam Tu, Satoshi Inoue, Phan Trong Tue, Takaaki Miyasako, Tatsuya Shimoda.

Language

English

Journal/Book name

Japanese:
English:	IEEE Transactions on Electron Devices

Volume, Number, Page

Vol. 60 p. 1149

Published date

Feb. 4, 2013

Publisher

Japanese:
English:	IEEE

Conference name

Japanese:
English:

Conference site

Japanese:
English: