Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

Publication Information

Title

Japanese:
English:	Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

Author

Japanese:	Pham Van Thanh, Bui Nguyen Quoc Trinh, 宮迫毅明, TRONG TUE PHAN, 徳光永輔, 下田達也.
English:	Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda.

Language

English

Journal/Book name

Japanese:
English:	Ferroelectric Letters Section

Volume, Number, Page

Vol. 40 p. 17

Published date

Aug. 13, 2013

Publisher

Japanese:
English:	Taylor & Francis

Conference name

Japanese:
English:

Conference site

Japanese:
English: