Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

Publication Information

Title

Japanese:
English:	Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

Author

Japanese:	Pham Van Thanh, Bui Nguyen Quoc Trinh, 宮迫毅明, TRONG TUE PHAN, 徳光永輔, 下田達也.
English:	Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 51

Published date

Sept. 20, 2012

Publisher

Japanese:
English:	IOP

Conference name

Japanese:
English:

Conference site

Japanese:
English: