Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs

Publication Information

Title

Japanese:
English:	Circuit speedoriented device design scheme for GaAsSb / InGaAs double gatehetero-junction tunnel FETs

Author

Japanese:	福田浩一, 野上直哉, 國貞彰吾, 宮本恭幸.
English:	K. Fukuda, N. Nogami, S. Kunisada, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

59, SGGA06 (2020)

Published date

Feb. 8, 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL