Mechanism of trench defect formation in InGaN/GaN single quantum well grown on single-crystal GaN substrate

Publication Information

Title

Japanese:
English:	Mechanism of trench defect formation in InGaN/GaN single quantum well grown on single-crystal GaN substrate

Author

Japanese:	丹下貴志, 松方妙子, 三宮工.
English:	T. Tange, T. Matsukata, T. Sannomiya.

Language

English

Journal/Book name

Japanese:
English:	Applied Physics Express

Volume, Number, Page

Volume 13 Number 6 062004

Published date

May 4, 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: