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Title
Japanese: 
English:High-quality, room-temperature, surface-activated bonding of GaInAsP/InPmembrane structure on silicon 
Author
Japanese: FangWeicheng, 高橋 直樹, 大磯 義孝, 雨宮 智宏, 西山 伸彦.  
English: Weicheng Fang, Naoki Takahashi, Yoshitaka Ohiso, Tomohiro Amemiya, Nobuhiko Nishiyama.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics 
Volume, Number, Page Vol. 59    No. 6    p. 060905
Published date June 4, 2020 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.35848/1347-4065/ab958a
Abstract Room-temperature surface-activated bonding (SAB) is a promising technology in large-scale hybrid photonic integration. To realize a membrane laser with low thermal resistance on Si without benzocyclobutene (BCB) bonding, a GaInAsP/InP membrane structure with a five-quantum-well activelayerwasbonded on Si successfully using SAB assisted bya thin a-Si film. The bonding strength reached a measurement limitation strength of 2.47 MPa for a 2 inch wafer with a thin 8.2 nm a-Si bonding layer without any annealing process for bonding. Over 90% of the bonding area, uniform photoluminescence intensity, and a well-maintained quantum-well structure were achieved after the InP-substrate removal.

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