High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs

Publication Information

Title

Japanese:
English:	High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs

Author

Japanese:	"Jun’ichi Shimizu", "Takumi Ohashi", 松浦賢太朗, 宗田伊理也, 角嶋邦之, 筒井一生, 若林整.
English:	"Jun’ichi Shimizu", "Takumi Ohashi", "Kentaro Matsuura", "Iriya Muneta", "Kuniyuki Kakushima", "Kazuo Tsutsui", "Hitoshi Wakabayashi".

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics (JJAP)

Volume, Number, Page

Vol. 56 No. 4S

Published date

2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI