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Publication Information
Title
Japanese:
English:
La2O3 gate dielectrics for AlGaN/GaN HEMT
Author
Japanese:
陳 江寧
,
川那子 高暢
,
若林 整
,
筒井 一生
,
岩井 洋
, "D. Nohata",
野平 博司
,
角嶋 邦之
.
English:
"J. Chen"
,
"T. Kawanago"
,
"H. Wakabayashi"
,
"K. Tsutsui"
,
"H. Iwai"
, "D. Nohata",
"H. Nohira"
,
"K. Kakushima"
.
Language
English
Journal/Book name
Japanese:
English:
Microelectronics Reliability
Volume, Number, Page
Vol. 60 pp. 16-19
Published date
2016
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
http://dx.doi.org/10.1016/j.microrel.2016.02.004
©2007
Tokyo Institute of Technology All rights reserved.