Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer

Publication Information

Title

Japanese:
English:	Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer

Author

Japanese:	宮本恭幸, 後藤高寛.
English:	Yasuyuki Miyamoto, Takahiro Gotow.

Language

English

Journal/Book name

Japanese:
English:	IEICE Transactions on Electronics

Volume, Number, Page

Vol. 103.C Page 304-307

Published date

June 1, 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI