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Publication Information
Title
Japanese:
English:
Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT
Author
Japanese:
川那子 高暢
,
角嶋 邦之
,
片岡 好則
,
西山 彰
,
杉井 信之
,
若林 整
,
筒井 一生
,
名取 研二
,
岩井 洋
.
English:
"T. Kawanago"
,
"K. Kakushima"
,
"Y. Kataoka"
,
"A. Nishiyama"
,
"N. Sugii"
,
"H. Wakabayashi"
,
"K. Tsutsui"
,
"K. Natori"
,
"H. Iwai"
.
Language
English
Journal/Book name
Japanese:
English:
IEEE Transaction on Electron Devices(T-ED)
Volume, Number, Page
Vol. 61 No. 3 pp. 785-791
Published date
Feb. 2014
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.1109/TED.2014.2299556
©2007
Tokyo Institute of Technology All rights reserved.