(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture

Publication Information

Title

Japanese:
English:	(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture

Author

Japanese:	川那子高暢, 角嶋邦之, AHMET PARHAT, 片岡好則, 西山彰, 杉井信之, 筒井一生, 名取研二, 服部健雄, 岩井洋.
English:	T. Kawanago, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	42nd European Solid-State Device Research Conference (ESSDERC 2012)

Conference site

Japanese:
English: