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Publication Information
Title
Japanese:
English:
Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment
Author
Japanese:
角嶋 邦之
,
舘 喜一
,
足立 学
,
岡本 晃一
, S. Sato,
宋 �漢
,
川那子 高暢
,
AHMET PARHAT
,
筒井 一生
,
杉井 信之
,
服部 健雄
,
H. Iwai
.
English:
K. Kakushima
,
K. Tachi
,
M. Adachi
,
K. Okamoto
, S. Sato,
J. Song
,
T. Kawanago
,
P. Ahmet
,
K. Tsutsui
,
N. Sugii
,
T. Hattori
,
H. Iwai
.
Language
English
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Sept. 15, 2008
Publisher
Japanese:
English:
Conference name
Japanese:
English:
the 38th European Solid-State Device Research Conference (ESSDERC2008)
Conference site
Japanese:
English:
Edinburgh
©2007
Tokyo Institute of Technology All rights reserved.