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Publication Information
Title
Japanese:
高累積線量におけるMOSFETのゲートバイアス特性比較
English:
Author
Japanese:
吉田僚一郎
,
木村有佐
,
安藤幹
,
大島佑太
,
鍋屋信介
,
平川顕二
,
岩瀬正幸
,
小笠原宗博
,
依田孝
,
石原昇
,
伊藤浩之
.
English:
Ryoichiro Yoshida
,
Arisa Kimura
,
Motoki Ando
,
Yuta Oshima
,
Shinsuke Nabeya
,
Kenji Hirakawa
,
Masayuki Iwase
,
Munehiro Ogasawara
,
Takashi Yoda
,
Noboru Ishihara
,
Hiroyuki Ito
.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Sept. 2020
Publisher
Japanese:
English:
Conference name
Japanese:
第81回 応用物理学会秋季学術講演会
English:
Conference site
Japanese:
English:
©2007
Tokyo Institute of Technology All rights reserved.