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Title
Japanese:高累積線量におけるMOSFETのゲートバイアス特性比較 
English: 
Author
Japanese: 吉田僚一郎, 木村有佐, 安藤幹, 大島佑太, 鍋屋信介, 平川顕二, 岩瀬正幸, 小笠原宗博, 依田孝, 石原昇, 伊藤浩之.  
English: Ryoichiro Yoshida, Arisa Kimura, Motoki Ando, Yuta Oshima, Shinsuke Nabeya, Kenji Hirakawa, Masayuki Iwase, Munehiro Ogasawara, Takashi Yoda, Noboru Ishihara, Hiroyuki Ito.  
Language Japanese 
Journal/Book name
Japanese: 
English: 
Volume, Number, Page        
Published date Sept. 2020 
Publisher
Japanese: 
English: 
Conference name
Japanese:第81回 応用物理学会秋季学術講演会 
English: 
Conference site
Japanese: 
English: 

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