Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates

Publication Information

Title

Japanese:
English:	Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates

Author

Japanese:	満原学, 後藤高寛, 星拓也, 杉山弘樹, 竹中充, 高木信一.
English:	Manabu Mitsuhara, Takahiro Gotow, Takuya Hoshi, Hiroki Sugiyama, Mitsuru Takenaka, Shinichi Takagi.

Language

English

Journal/Book name

Japanese:
English:	Journal of Crystal Growth

Volume, Number, Page

555 125970

Published date

Nov. 29, 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: