Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

Publication Information

Title

Japanese:
English:	Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

Author

Japanese:	青田智也, 早坂明泰, 眞壁勇夫, 吉田成輝, 後藤高寛, 宮本恭幸.
English:	T. Aota, A. Hayasaka, I. Makabe, S. Yoshida, T. Gotow, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

60 SCCF06

Published date

Mar. 8, 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: