Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing

Publication Information

Title

Japanese:
English:	Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing

Author

Japanese:	水谷一翔, LIN Yu-Wei, 星井拓也, 舟窪浩, 若林整, Kazuto Tsutsui, 角嶋邦之.
English:	Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Aug. 10, 2020

Publisher

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English:

Conference name

Japanese:
English:	2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications)

Conference site

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English: