ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact

Publication Information

Title

Japanese:
English:	ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact

Author

Japanese:	濱田昌也, 松浦賢太朗, 濱田拓也, 宗田伊理也, 角嶋邦之, 筒井一生, 若林整.
English:	Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics (JJAP) （SSDM特集号）

Volume, Number, Page

Vol. 60 Page SBBH05

Published date

Jan. 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI