3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology

Publication Information

Title

Japanese:
English:	3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology

Author

Japanese:	Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, 角嶋邦之, 星井拓也, 筒井一生, 岩井洋, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, 大橋弘通, Toshiro Hiramoto.
English:	Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Katsumi Satoh, Tomoko Matsudai, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Dec. 2020

Publisher

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English:

Conference name

Japanese:
English:	International Electron Devices Meeting (IEDM) 2020

Conference site

Japanese:
English: