Simulation-Based Understanding of “Charge-Sharing Phenomenon” Induced by Heavy-Ion Incident on a 65nm Bulk CMOS Memory Circuit

Publication Information

Title

Japanese:
English:	Simulation-Based Understanding of “Charge-Sharing Phenomenon” Induced by Heavy-Ion Incident on a 65nm Bulk CMOS Memory Circuit

Author

Japanese:	丸明史, 松田晃史, Satoshi Kuboyama, 吉本護.
English:	Akifumi Maru, Akifumi Matsuda, Satoshi Kuboyama, Mamoru Yoshimoto.

Language

English

Journal/Book name

Japanese:
English:	IEICE Transactions on Electronics

Volume, Number, Page

E105.C 1 47-50

Published date

Jan. 1, 2022

Publisher

Japanese:
English:	Institute of Electronics, Information and Communications Engineers (IEICE)

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI