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Publication Information
Title
Japanese:
English:
Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage
Author
Japanese:
小笠原宗博
,
吉田僚一郎
,
大島佑太
,
安藤幹
,
木村有佐
,
平川顕二
,
岩瀬正幸
,
鍋屋信介
,
依田 孝
,
石原昇
,
伊藤浩之
.
English:
Munehiro Ogasawara
,
Ryoichiro Yoshida
,
Yuta Oshima
,
Motoki Ando
,
Arisa Kimura
,
Kenji Hirakawa
,
Masayuki Iwase
,
Shinsuke Nabeya
,
Takashi Yoda
,
Noboru Ishihara
,
Hiroyuki Ito
.
Language
English
Journal/Book name
Japanese:
English:
Japanese Journal of Applied Physics
Volume, Number, Page
Vol. 60 104501-1
Published date
Dec. 17, 2021
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.35848/1347-4065/ac25cd
©2007
Tokyo Institute of Technology All rights reserved.