Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage

Author

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 60 104501-1

Published date

Dec. 17, 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI

https://doi.org/10.35848/1347-4065/ac25cd

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