Proposal of breakdown voltage control of GaN HEMT by interface charge | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Proposal of breakdown voltage control of GaN HEMT by interface charge

Author

Japanese:	宮本恭幸, 後藤高寛.
English:	Y. Miyamoto, T. Gotow.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

May 9, 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Compound Semiconductor Week 2021

Conference site

Japanese:	ストックホルム
English:	Stockholm

Official URL

https://csw2021.se/

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